无锡固电ISC 三*管BDT88

D*CRIPTION

·DC Current Gain -h_FE= 40(Min)@I_C= -5A

·Collector-Emitter Sustaining Voltage-

: V_CEO(SUS)= -60V(Min)- BDT82; -80V(Min)- BDT84;

-100V(Min)- BDT86; -120V(Min)- BDT88

·Complement to T*eBDT81/83/85/87

APPLICATIONS

·Designed for use in audio output stages and general amplifer

andswitching applications

*SYOL**	PARAMETER		VALUE	UNIT
V_CBO	Collector-Base Voltage	BDT82	-60	V
		BDT84	-80
		BDT86	-100
		BDT88	-120
V_CEO	Collector-Emitter Voltage	BDT82	-60	V
		BDT84	-80
		BDT86	-100
		BDT88	-120
V_EBO	Emitter-Base Voltage		-7	V
I_C	Collector Current-Continuous		-15	A
I_CM	Collector Current-Peak		-20	A
I_B	Base Current		-4	A
P_C	Collector Power Dissipation T_C=25℃		125	W
T_j	Junction Temperature		150	℃
T_stg	StorageTemperature Range		-65~150	℃

THERMAL CHARA*ERISTICS

*SYOL**	PARAMETER	MAX	UNIT
R_{th j-c}	Thermal Resistance,Junction to Case	1	℃/W
R_{th j-a}	Thermal Resistance,Junction to Ambient	70	℃/W

ELE*RICAL CHARA*ERISTICS

T_C=25℃unless otherwise specified

*SYOL**	PARAMETER		CONDITIONS	MIN	TYP.	MAX	UNIT
V_CEO(SUS)	Collector-Emitter Sustaining Voltage	BDT82	I_C= -30mA; I_B= 0	-60			V
		BDT84		-80
		BDT86		-100
		BDT88		-120
V_CE_(sat)-1	Collector-Emitter Saturation Voltage		I_C= -5A; I_B= -0.5A			-1.0	V
V_CE_(sat)-2	Collector-Emitter Saturation Voltage		I_C= -7A; I_B= -0.7A			-1.6	V
V_BE_(on)	Base-Emitter On Voltage		I_C= -5A ; V_CE= -4V			-1.5	V
I_C*	Collector Cutoff Current		V_CE= 0.8V_CBOmax; V_BE= 0			-1	mA
I_CBO	Collector Cutoff Current		V_CB= V_CBOmax; I_E= 0			-0.2	mA
I_EBO	Emitter Cutoff Current		V_EB= -7V; I_C= 0			-0.1	mA
h_FE-1	DC Current Gain		I_C= -50mA ; V_CE= -10V	40
h_FE-2	DC Current Gain		I_C= -5A ; V_CE= -4V	40
f_T	Current-Gain—Bandwidth Product		I_C= -0.5A ; V_CE= -10V		20		MHz
Switching Times
t_on	Turn-On Time		I_C= -7A; I_B1= -I_B2= -0.7A			1	μs
t_off	Turn-Off Time		I_C= -7A; I_B1= -I_B2= -0.7A			2	μs

是否提供**

是

品牌/商标

ISC

型号/规格

BDT88

应用范围

放大

材料

硅(Si)

*性

PNP型

结构

平面型

封装形式

直插型

封装材料

塑料封装

无锡固电ISC 供应三*管BDT88