无锡固电ISC 供应2*947三*管
地区：江苏 无锡
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·Low Collector Saturation Voltage-
: VCE(sat)= -0.6V(Max)@IC= -7A
·High Speed Switching
APPLICATIONS
·Designed for low-voltage switching applications.
SY*OL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | -40 | V |
VCEO | Collector-Emitter Voltage | -20 | V |
VEBO | Emitter-Base Voltage | -5 | V |
IC | Collector Current-Continuous | -10 | A |
ICM | Collector Current-Peak | -15 | A |
PC | Collector Power Dissipation @ Ta=25℃ | 2 | W |
Collector Power Dissipation @ TC=25℃ | 35 | ||
TJ | JunctionTemperature | 150 | ℃ |
Tstg | StorageTemperature Range | -55~150 | ℃ |
ELE*RICAL CHARA*ERISTICS
TC=25℃unless otherwise specified
SY*OL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= -10mA; IB=0 | -20 |
|
| V |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= -7A; IB= -0.23A |
|
| -0.6 | V |
VBE(sat) | Base-Emitter Saturation Voltage | IC= -7A; IB= -0.23A |
|
| -1.5 | V |
ICBO | Collector Cutoff Current | VCB= -40V; IE= 0 |
|
| -50 | μA |
IEBO | Emitter Cutoff Current | VEB= -5V; IC= 0 |
|
| -50 | μA |
hFE-1 | DC Current Gain | IC= -0.1A; VCE= -2V | 45 |
|
|
|
hFE-2 | DC Current Gain | IC= -2A; VCE= -2V | 90 |
| 260 |
|
fT | Current-Gain—Bandwidth Product | IC=-0.5A; VCE= -10V; ftest=10MHz |
| 150 |
| MHz |
Switching times | ||||||
ton | Turn-on Time | IC= -2A, IB1= -IB2= -66mA |
| 0.1 |
| μs |
tstg | Storage Time |
| 0.5 |
| μs | |
tf | Fall Time |
| 0.1 |
| μs | |
u hFE-1Cl*ifications
Q | P |
90-180 | 130-260 |
是
ISC
2*947
放大
硅(Si)
PNP型
平面型
直插型
塑料封装
