无锡固电ISC 供应2SA753三*管

SY*OL

PARAMETER

VALUE

UNIT

V_CBO

Collector-Base Voltage

-140

V

V_CEO

Collector-Emitter Voltage

-110

V

V_EBO

Emitter-Base Voltage

-5

V

I_C

Collector Current-Continuous  

-10

A

I_C

Collector Current-Peak

-12

A

P_C

Collector Power Dissipation

@T_C=25℃

100

W

T_j

Junction Temperature

150

℃

T_stg

Storage Temperature

-55~150

℃

SY*OL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V_(BR)CEO

Collector-Emitter Breakdown Voltage

I_C= -50mA; R_BE=∞

-110

V

V_(BR)CBO

Collector-Base Breakdown Voltage

I_C= -5mA; I_E= 0

-140

V

V_(BR)EBO

Emitter-Base Breakdown Voltage

I_E= -5mA; I_C= 0

-5

V

V_CE(sat)

Collector-Emitter Saturation Voltage

I_C= -5A; I_B= -1A

-1.5

V

V_BE(on)

Base-Emitter On Voltage

I_C= -1A; V_CE= -5V

-1.5

V

I_CBO

Collector Cutoff Current

V_CB= -30V; I_E= 0

-1

mA

h_FE-1

DC Current Gain

I_C= -1A; V_CE= -5V

30

200

h_FE-2

DC Current Gain

I_C= -10A; V_CE= -5V

15

f_T

Current-Gain—Bandwidth Product

I_C= -1A; V_CE= -5V

20

MHz

A

B

C

30-60

50-120

100-200