无锡固电ISC供应2SD5071三*管

SY*OL

PARAMETER

VALUE

UNIT

V_CBO

Collector-Base Voltage                        

1500

V

V_CEO

Collector-Emitter Voltage                        

800

V

V_EBO

Emitter-Base Voltage

   6

V

I_C

Collector Current- Continuous

3.5

A

I_CM

Collector Current-Peak

10

A

P_C

Collector Power Dissipation

@ T_C=25℃

50

W

T_J

JunctionTemperature

150

℃

T_stg

StorageTemperature Range

-55~150

℃

SY*OL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V_CE(sat)

Collector-Emitter Saturation Voltage

I_C= 2.5A; I_B= 0.8A

8.0

V

V_BE(sat)

Base-Emitter Saturation Voltage

I_C= 2.5A; I_B= 0.8A

1.5

V

I_CBO

Collector Cutoff Current

V_CB= 800V ; I_E= 0

10

μA

I_EBO

Emitter Cutoff Current

V_EB= 4V ; I_C= 0

40

200

mA

h_FE

DC Current Gain

I_C= 0.5A; V_CE= 5V

8

V_ECF

C-E Diode Forward Voltage

I_F= 3.5A

2.0

V

f_T

Current-Gain—Bandwidth Product

I_C= 0.5A; V_CE= 10V

3

MHz

t_f

Fall Time

I_C= 3A, I_B1= 0.8A; I_B2= -1.6A

R_L= 66.7Ω; V_CC= 200V

0.4

μs