无锡固电ISC 供应BD649 三*管 普通可控硅三*管 增强型MSO管

SY*OL

PARAMETER

VALUE

UNIT

V_CBO

Collector-Base Voltage                      

120

V

V_CEO

Collector-Emitter Voltage                         

100

V

V_EBO

Emitter-Base Voltage

5

V

I_C

Collector Current-Continuous

8

A

I_CP

Collector Current-Peak

12

A

I_B

Base Current-Continuous 

0.3

A

P_C

Collector Power Dissipation

@ T_a=25℃

2

W

Collector Power Dissipation

@ T_C=25℃

62.5

T_J

JunctionTemperature

150

℃

T_stg

StorageTemperature Range

-65~150

℃

SY*OL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V_CEO(SUS)

Collector-Emitter Breakdown Voltage

I_C= 30mA; I_B= 0

100

V

V_CE(sat)-1

Collector-Emitter Saturation Voltage

I_C= 3A; I_B= 12mA

2.0

V

V_CE(sat)-2

Collector-Emitter Saturation Voltage

I_C= 5A; I_B= 50mA

2.5

V

V_BE(sat)

Base-Emitter Saturation Voltage

I_C= 5A; I_B= 50mA

3.0

V

V_BE(on)

Base-Emitter On Voltage

I_C= 3A ; V_CE= 3V

2.5

V

I_CBO

Collector Cutoff Current

V_CB= 100V; I_E= 0

0.2

mA

V_CB= 60V; I_E= 0; T_C= 150℃

2.0

I_CEO

Collector Cutoff Current

V_CE= 50V; I_B= 0

0.5

mA

I_EBO

Emitter Cutoff Current

V_EB= 5V; I_C= 0

5

mA

h_FE

DC Current Gain

I_C= 3A ; V_CE= 3V

750