无锡固电ISC 供应BU912三*管

SY*OL

PARAMETER

VALUE

UNIT

V_CBO

Collector-Base Voltage                     

500

V

V_CEO

Collector-Emitter Voltage                        

450

V

V_EBO

Emitter-Base Voltage

5

V

I_C

Collector Current-Continuous

6

A

I_CM

Collector Current-Peak

10

A

I_B

Base Current

1

A

P_C

Collector Power Dissipation

@ T_C=25℃

60

W

T_J

JunctionTemperature

150

℃

T_stg

StorageTemperature Range

-65~150

℃

SY*OL

PARAMETER

MAX

UNIT

R_{th j-c}

Thermal Resistance, Junction to Case

2.08

℃/W

SY*OL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V_CEO(SUS)

Collector-Emitter Sustaining Voltage

I_C= 100mA ;I_B= 0

450

V

V_CE(sat)-1

Collector-Emitter Saturation Voltage

I_C= 2.5A; I_B= 50mA

1.8

V

V_CE(sat)-2

Collector-Emitter Saturation Voltage

I_C= 4A; I_B= 0.2A

1.8

V

V_BE(sat)-1

Base-Emitter Saturation Voltage

I_C= 2.5A; I_B= 50mA

2.2

V

V_BE(sat)-2

Base-Emitter Saturation Voltage

I_C= 4A; I_B= 0.2A

2.5

V

I_C*

Collector Cutoff Current

V_CE= 500V; V_BE= 0

V_CE= 500V; V_BE= 0,T_C= 125℃

1

5

mA

I_CEO

Collector Cutoff Current

V_CE= 450V; I_B= 0

1

mA

I_EBO

Emitter Cutoff Current

V_EB= 5V; I_C= 0

5

mA

V_ECF

C-E Diode Forward Voltage

I_F= 4A

2.5

V