无锡固电ISC供应2*691三*管

SY*OL

PARAMETER

VALUE

UNIT

V_CBO

Collector-Base Voltage                     

-130

V

V_CEO

Collector-Emitter Voltage                        

-80

V

V_EBO

Emitter-Base Voltage

-5

V

I_C

Collector Current-Continuous

-5

A

P_C

Collector Power Dissipation

@ T_C=25℃

60

W

T_J

JunctionTemperature

150

℃

T_stg

StorageTemperature Range

-55~150

℃

SY*OL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V_(BR)CEO

Collector-Emitter Breakdown Voltage

I_C= -30mA; I_B= 0

-80

V

V_(BR)CBO

Collector-BaseBreakdownVoltage                     

I_C= -1mA; I_E= 0

-130

V

V_(BR)EBO

Emitter-BaseBreakdownVoltage

I_E= -1mA; I_C= 0

-5

V

V_CE(sat)

Collector-Emitter Saturation Voltage

I_C= -3A; I_B= -0.3A

-1.5

V

V_BE(on)

Base-Emitter On Voltage

I_C= -1A; V_CE= -5V

-1.5

V

I_CBO

Collector Cutoff Current

V_CB= -130V; I_E=0

-100

μA

I_EBO

Emitter Cutoff Current

V_EB= -5V; I_C=0

-100

μA

h_FE-1

DC Current Gain

I_C= -1A; V_CE= -5V

40

200

h_FE-2

DC Current Gain

I_C= -3A; V_CE= -5V

20

C_OB

Output Capacitance

I_E=0; V_CB= -10V; f_test= 1.0MHz

190

pF

f_T

Current-Gain—Bandwidth Product

I_C=-1A; V_CE= -5V

7

MHz