无锡固电ISC供应2S*278三*管

SY*OL

PARAMETER

VALUE

UNIT

V_CBO

Collector-Base Voltage                     

150

V

V_CEO

Collector-Emitter Voltage                        

150

V

V_EBO

Emitter-Base Voltage

5

V

I_C

Collector Current-Continuous

10

A

P_C

Collector Power Dissipation

@ T_C=25℃

100

W

T_J

JunctionTemperature

150

℃

T_stg

StorageTemperature Range

-55~150

℃

SY*OL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V_(BR)CEO

Collector-Emitter Breakdown Voltage

I_C= 25mA; I_B= 0

150

V

V_(BR)CBO

Collector-BaseBreakdownVoltage                     

I_C= 0.1mA; I_E= 0

150

V

V_(BR)EBO

Emitter-BaseBreakdownVoltage

I_E= 0.1mA; I_C= 0

5

V

V_CE(sat)

Collector-Emitter Saturation Voltage

I_C= 7A; I_B= 0.7A

1.0

V

I_CBO

Collector Cutoff Current

V_CB= 150V; I_E= 0

5

μA

I_EBO

Emitter Cutoff Current

V_EB= 5V; I_C= 0

5

μA

h_FE

DC Current Gain

I_C= 1A; V_CE= 5V

60

320

C_OB

Collector Output Capacitance

I_E= 0; V_CB= 10V; f= 1MHz

200

pF

f_T

Current-Gain—Bandwidth Product

I_E= -1A; V_CE= 5V

20

MHz

D

E

F

60-120

100-200

160-320