无锡固电ISC 供应2*778三*管

SY*OL

PARAMETER

VALUE

UNIT

V_CBO

Collector-Base Voltage                     

-120

V

V_CEO

Collector-Emitter Voltage                        

-120

V

V_EBO

Emitter-Base Voltage

-5

V

I_C

Collector Current-Continuous

-10

A

I_B

Base Current-Continuous

-1

A

P_C

Collector Power Dissipation

@ T_C=25℃

80

W

T_J

JunctionTemperature

150

℃

T_stg

StorageTemperature Range

-55~150

℃

SY*OL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V_(BR)CEO

Collector-Emitter Breakdown Voltage

I_C= -50mA ; I_B= 0

-120

V

V_CE(sat)

Collector-Emitter Saturation Voltage

I_C= -5.0A; I_B= -0.5A

-2.5

V

V_BE(on)

Base-Emitter On Voltage

I_C= -5A ; V_CE= -5V

-1.5

V

I_CBO

Collector Cutoff Current

V_CB= -120V ; I_E=0

-10

μA

I_EBO

Emitter Cutoff Current

V_EB= -5V; I_C=0

-10

μA

h_FE

DC Current Gain

I_C= -1A ; V_CE= -5V

55

160

C_OB

Output Capacitance

I_E=0 ; V_CB= -10V;f_test= 1.0MHz

280

pF

f_T

Current-Gain—Bandwidth Product

I_C=-1A ; V_CE= -5V

10

MHz

R

O

55-110

80-160