无锡固电ISC 供应三*管BDW36

SY*OL

PARAMETER

VALUE

UNIT

V_CBO

Collector-Base Voltage

180

V

V_CEO

Collector-Emitter Voltage

180

V

V_EBO

Emitter-Base Voltage

7

V

I_C

Collector Current-Continuous

30

A

I_CM

Collector Current-Peak

50

A

I_B

Base Current-Continuous

10

A

P_C

Collector Power Dissipation @T_C=25℃

250

W

T_J

Junction Temperature

200

℃

T_stg

Storage Temperature

-65~200

℃

SY*OL

PARAMETER

MAX

UNIT

R_{th j-c}

Thermal Resistance,Junction to Case

0.875

℃/W

SY*OL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

V_CEO(SUS)

Collector-Emitter Sustaining Voltage

I_C= 50mA; I_B= 0

150

V

V_CE(sat)-1

Collector-Emitter Saturation Voltage

I_C= 10A; I_B= 1A

1.0

V

V_CE(sat)-2

Collector-Emitter Saturation Voltage

I_C= 30A; I_B= 6A

3.0

V

V_BE(sat)-1

Base-Emitter Saturation Voltage

I_C= 10A; I_B= 1A

1.8

V

V_BE(on)

Base-Emitter On Voltage

I_C= 10A; V_CE= 4V

1.8

V

I_CEO

Collector Cutoff Current

V_CE= 90V; I_B= 0

50

μA

I_CBO

Collector Cutoff Current

V_CB=180V; I_E= 0

10

μA

I_EBO

Emitter Cutoff Current

V_EB= 6V; I_C= 0

0.1

mA

h_FE-1

DC Current Gain

I_C= 8A; V_CE= 4V

20

100

h_FE-2

DC Current Gain

I_C= 30A; V_CE= 4V

5

f_T

Current-Gain—Bandwidth Product

I_C= 1A ; V_CE= 10V

1

MHz