无锡固电ISC 供应BDY56三*管

SY*OL

PARAMETER

VALUE

UNIT

V_CBO

Collector-Base Voltage

150

V

V_CEO

Collector-Emitter Voltage

120

V

V_EBO

Emitter-Base Voltage

7

V

I_C

Collector Current-Continuous

15

A

I_B

Base Current

7

A

P_C

Collector Power Dissipation@T_C=25℃

117

W

T_J

Junction Temperature

200

℃

T_stg

Storage Temperature

-65~200

℃

SY*OL

PARAMETER

MAX

UNIT

R_{th j-c}

Thermal Resistance,Junction to Case

1.5

℃/W

SY*OL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

V_CEO(SUS)

Collector-Emitter Sustaining Voltage

I_C=200mA; I_B= 0

120

V

V_CE(sat)-1

Collector-Emitter Saturation Voltage

I_C= 4A; I_B= 0.4A

1.1

V

V_CE(sat)-2

Collector-Emitter Saturation Voltage

I_C= 10A; I_B= 3.3A

2.5

V

V_BE(on)

Base-Emitter On Voltage

I_C= 4A; V_CE= 4V

1.8

V

I_CEO

Collector Cutoff Current

V_CE= 60V; I_B= 0

0.5

mA

I_CEX

Collector Cutoff Current

V_CE= 150V; V_BE=-1.5V

V_CE= 150V; V_BE=-1.5V, T_C=150℃

3.0

30

mA

I_EBO

Emitter Cutoff Current

V_EB= 7V; I_C= 0

3.0

mA

h_FE-1

DC Current Gain

I_C= 4A; V_CE= 4V

20

70

h_FE-2

DC Current Gain

I_C= 10A; V_CE= 4V

10

f_T

Current Gain-Bandwidth Product

I_C= 1A; V_CE= 4V; f=10MHz

10

MHz

Switching Times

t_on

Turn-On Time

I_C= 5A; I_B= 1A

0.5

μs

t_off

Turn-Off Time

I_C= 5A; I_B1= 1A; I_B2= -0.5A

2.0

μs