无锡固电ISC 供应2N6302 三*管 直插三*管 增强型MOS管

SY*OL

PARAMETER

VALUE

UNIT

V_CBO

Collector-Base Voltage

140

V

V_CEO

Collector-Emitter Voltage

140

V

V_EBO

Emitter-Base Voltage

7

V

I_C

Collector Current-Continuous

16

A

I_CM

Collector Current-Peak

20

A

I_B

Base Current-Continuous

5

A

P_C

Collector Power Dissipation @T_C=25℃

150

W

T_J

Junction Temperature

200

℃

T_stg

Storage Temperature

-65~200

℃

SY*OL

PARAMETER

MAX

UNIT

R_{th j-c}

Thermal Resistance,Junction to Case

0.875

℃/W

SY*OL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

V_CEO(SUS)

Collector-Emitter Sustaining Voltage

I_C= 100mA; I_B= 0

140

V

V_CE(sat)-1

Collector-Emitter Saturation Voltage

I_C= 10A; I_B= 1A

1.0

V

V_CE(sat)-2

Collector-Emitter Saturation Voltage

I_C= 16A; I_B= 4A

2.0

V

V_BE(sat)

Base-Emitter Saturation Voltage

I_C= 10A; I_B= 1A

1.8

V

V_BE(on)

Base-Emitter On Voltage

I_C= 8A ; V_CE= 4V

1.5

V

I_CEO

Collector Cutoff Current

V_CE= 70V; I_B= 0

2.0

mA

I_CEV

Collector Cutoff Current

V_CE= 140V; V_BE(off)= 1.5V

V_CE= 140V; V_BE(off)= 1.5V,T_C=150℃

1.0

5.0

mA

I_CBO

Collector Cutoff Current

V_CB= 140V; I_E= 0

1.0

mA

I_EBO

Emitter Cutoff Current

V_EB= 7V; I_C= 0

1.0

mA

h_FE-1

DC Current Gain

I_C= 8A ; V_CE= 4V

15

60

h_FE-2

DC Current Gain

I_C= 16A ; V_CE= 4V

4

f_T

Current Gain-Bandwidth Product

I_C= 1A ; V_CE= 10V; f= 1.0MHz

0.2

MHz