图文详情
产品属性
相关推荐
·High Breakdown Voltage-
:VCBO= 1500V (Min)
·High Switching Speed
·Low Saturation Voltage
·Built-in Damper Diode
APPLICATIONS
·Designed for color TV horizontal output applications
SY*OL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | 1500 | V |
VCEO | Collector-Emitter Voltage | 600 | V |
VEBO | Emitter-Base Voltage | 5 | V |
IC | Collector Current- Continuous | 5 | A |
IB | Base Current- Continuous | 2.5 | A |
PC | Collector Power Dissipation @ TC=25℃ | 50 | W |
TJ | JunctionTemperature | 150 | ℃ |
Tstg | StorageTemperature Range | -55~150 | ℃ |
ELE*RICAL CHARA*ERISTICS
TC=25℃unless otherwise specified
SY*OL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
V(BR)EBO | Emitter-Base Breakdown Voltage | IE= 200mA ; IC= 0 | 5 |
|
| V |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= 3.5A; IB= 0.8A |
|
| 5.0 | V |
VBE(sat) | Base-Emitter Saturation Voltage | IC= 3.5A; IB= 0.8A |
|
| 1.5 | V |
ICBO | Collector Cutoff Current | VCB= 500V; IE= 0 |
|
| 10 | μA |
hFE | DC Current Gain | IC= 1A ; VCE= 5V | 8 |
|
|
|
VECF | C-E Diode Forward Voltage | IF= 5A |
|
| 2.0 | V |
fT | Current-Gain—Bandwidth Product | IC= 0.1A ; VCE= 10V |
| 3 |
| MHz |
COB | Output Capacitance | IE= 0 ; VCB= 10V; ftest=1.0MHz |
| 105 |
| pF |
tf | Fall Time | ICP= 3.5A, IB1(end)= 0.8A |
| 0.5 | 1.0 | μs |
是
isc
2SD2095
放大
硅(Si)
NPN型
平面型
直插型
塑料封装