无锡固电ISC 达林顿三*管 MJ15003

SY*OL

PARAMETER

VALUE

UNIT

V_CBO

Collector-Base Voltage

140

V

V_CEO

Collector-Emitter Voltage

140

V

V_EBO

Emitter-Base Voltage

5

V

I_C

Collector Current-Continuous 

20

A

I_B

Base Current-Continuous

5

A

I_E

Emitter Current-Continuous 

-25

A

P_D

Total Power Dissipation@T_C=25℃

250

W

T_j

Junction Temperature

200

℃

T_stg

Storage Temperature

-65~200

℃

SY*OL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

V_CEO(SUS)

Collector-Emitter Sustaining Voltage

I_C= 0.2A ;I_B= 0

140

V

V_CE(sat)

Collector-Emitter Saturation Voltage

I_C= 5A; I_B= 0.5A

1

V

V_BE(on)

Base-Emitter On Voltage

I_C= 5A ; V_CE= 2V

2

V

I_CEO

Collector Cutoff Current

V_CE= 140V; I_B= 0

0.25

mA

I_CEX

Collector Cutoff Current

V_CE= 140V; V_BE(OFF)= 1.5V

V_CE= 140V; V_BE(OFF)= 1.5V;T_C= 150℃

0.1

2.0

mA

I_EBO

Emitter Cutoff Current

V_EB= 5V; I_C= 0

0.1

mA

h_FE

DC Current Gain

I_C= 5A ; V_CE= 2V

25

150

I_s/b

Second Breakdown Collector Current with Base Forward Biased

V_CE= 50V,t= 1s, Nonrepetitive

5

A

V_CE= 100V,t= 1s, Nonrepetitive

1

C_OB

Output Capacitance

I_E= 0 ; V_CB= 10V;f_test= 1.0MHz

1000

pF

f_T

Current-Gain—Bandwidth Product

I_C= 0.5A ; V_CE= 10V;f_test= 0.5MHz

2

MHz