无锡固电ISC供应MJE13007晶体管

SY*OL

PARAMETER

VALUE

UNIT

V_CEV

Collector-Emitter Voltage

700

V

V_CEO

Collector-Emitter Voltage

400

V

V_EBO

Emitter-Base Voltage

9

V

I_C

Collector Current-Continuous

8

A

I_CM

Collector Current-peak

16

A

I_B

Base Current

4

A

I_BM

Base Current-Peak

8

A

I_E

Emitter Current

12

A

I_EM

Emitter Current-Peak

24

A

P_C

Collector Power Dissipation

T_C=25℃

80

W

T_i

Junction Temperature

150

℃

T_stg

StorageTemperature Range

-65~150

℃

SY*OL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V_CEO(SUS)

Collector-Emitter Sustaining Voltage

I_C= 10mA; I_B= 0

400

V

V_CE(sat)-1

Collector-Emitter Saturation Voltage

I_C= 2A ;I_B= 0.4A

1.0

V

V_CE(sat)-2

Collector-Emitter Saturation Voltage

I_C= 5A ;I_B= 1A

T_C= 100℃

2.0

3.0

V

V_CE(sat)-3

Collector-Emitter Saturation Voltage

I_C= 8A ;I_B= 2A

3.0

V

V_BE(sat)-1

Base-Emitter Saturation Voltage

I_C= 2A ;I_B= 0.4A

1.2

V

V_BE(sat)-2

Base-Emitter Saturation Voltage

I_C= 5A ;I_B= 1A

T_C= 100℃

1.6

1.5

V

I_C*

Collector Cutoff Current

V_C*= 700V_;V_BE(off)= 1.5V

T_C= 125℃

0.1

1.0

mA

I_EBO

Emitter Cutoff Current

V_EB= 9V; I_C= 0

0.1

mA

h_FE-1

DC Current Gain

I_C= 2A; V_CE= 5V

8

40

h_FE-2

DC Current Gain

I_C= 5A; V_CE= 5V

5

30

f_T

Current-Gain—Bandwidth Product

I_C= 0.5 A; V_CE= 10V;

4

MHz

C_OB

Output Capacitance

I_E= 0; V_CB= 10V; f_test= 0.1MHz

80

pF

Switching Times; Resistive Load

t_d

Storage Time

I_C= 5A; V_CC= 125V;

I_B1= I_B2= 1A; t_p= 25μs;

Duty Cycle≤1%

0.1

μs

t_r

Fall Time

1.5

μs

t_s

Storage Time

3.0

μs

t_f

Fall Time

0.7

μs