大功率 LED芯片 BH-Y4242D-A1(黃光)双电* 台湾光宏
地区:上海 上海市
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Scope | |||||
This specification applies to AlInGaP metal bonding 42 x 42mil yellow LED chip, BH-Y4242D-A1. | |||||
Materials | |||||
P-pad:Au alloy | |||||
Dimensions | |||||
Chip size:1060&plu*n;25μm x 1060&plu*n;25μm. | |||||
Electro-optical characteristics and specification: (Tc=25°C) | |||||
Test parameter | Condition | Min | T* | Max | Unit |
Dominant wavelength(Wd) | 350mA | 570 | - | 610 | nm |
Luminous intensity(Iv) | 350mA | 4150 | - | 10000 | mcd |
Forward voltage(Vf4) | 10uA | 1.3 | - | 2.5 | V |
Forward voltage(Vf1) | 350mA | 1.8 | - | 2.6 | V |
Reverse current (Ir) | -10V | 0 | - | 2 | uA |
否
LED芯片
BH-Y4242D-A3
台湾光宏
黄光
方片
42(mil)
*亮
2.8(V)
585~595(nm)