台湾光宏大功率 LED芯片 BH-R4242D-A1（红光）双电*

Scope
This specification applies to AlInGaP metal bonding 42 x 42mil red LED chip, BH-R4242D-A1.

Materials
P-pad：Au alloy. N-pad：Au alloy.

Dimensions
Chip size：1060&plun;25μm x 1060&plun;25μm. P-pad：Ø120&plun;10μm, thickness 3.5&plun;0.3μm. N-pad：Ø120&plun;10μm, thickness 3.5&plun;0.3μm. Chip thickness：200μm&plu*n;25μm.

Electro-optical characteristics and specification: (Tc=25°C)
Test parameter	Condition	Min	T*	Max	Unit
Dominant wavelength(Wd)	350mA	600	-	650	nm
Luminous intensity(Iv)	350mA	1450	-	12000	mcd
Forward voltage(Vf4)	10uA	1.3	-	2.5	V
Forward voltage(Vf1)	350mA	1.8	-	2.8	V
Reverse current (Ir)	-10V	0	-	2	uA