FM25640B-GATR 存储器 F-RAM

FM25640B-GATR

F-RAM 64Kb Serial SPI 5V FRAM 64-Kbit (8 K × 8) Serial (SPI) Automotive  F-RAM

Functional Description

The FM25640B-GATR FM25640B is a 64-Kbit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 121 years while eliminating the complexities, overhead, and system level reliability problems caused by serial flash, EEPROM, and other nonvolatile memories.

Unlike serial flash and EEPROM, the FM25640B-GATR FM25640B performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared with other nonvolatile memories. The FM25640B is capable of supporting 1013 read/write cycles, or 10 million times more write cycles than EEPROM.

Features FM25640B-GATR

■ 64-Kbit ferroelectric random access memory (F-RAM) logically

organized as 8 K × 8

❐ High-endurance 10 trillion (1013) read/writes

❐ 121-year data retention (See the Data Retention and

Endurance table)

❐ NoDelay™ writes

❐ Advanced high-reliability ferroelectric process

■ Very fast serial peripheral interface (SPI)

❐ Up to 4 MHz frequency

❐ Direct hardware replacement for serial flash and EEPROM

❐ Supports SPI mode 0 (0, 0) and mode 3 (1, 1)