IS42S16100H-6TLI-TR 动态随机存取存储器

IS42S16100H-6TLI-TR

动态随机存取存储器 16M, 3.3V, S  1Mx16, 166Mhz,RoHS

DESCRIPTION IS42S16100H-6TLI-TR

ISSI’s 16Mb Synchronous DRAM IS42S16100H-6TLI-TR IS42/4516100H is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.

FEATURES IS42S16100H-6TLI-TR

• Clock frequency: 200, 166, 143 MHz

• Fully synchronous; all signals referenced to a positive clock edge

• Two banks can be operated simultaneously and independently

• Dual internal bank controlled by A11 (bank select)

• Single 3.3V power supply

• LVTTL interface

• Programmable burst length

– (1, 2, 4, 8, full page)

• Programmable burst sequence: Sequential/Interleave

• 2048 refresh cycles every 32ms (Com, Ind, A1 grade) or 16ms (A2 grade)

• Random column address every clock cycle

• Programmable CAS latency (2, 3 clocks)

• Burst read/write and burst read/single write operations capability

• Burst termination by burst stop and precharge command

• Byte controlled by LDQM and UDQM

• Packages: 400-mil 50-pin TSOP-II and 60-ball TF-BGA