IS62WV12816EBLL-45TLI 静态随机存取存储器

IS62WV12816EBLL-45TLI

静态随机存取存储器 2Mb, Low Power/Power Saver,Async,128K x 16,45ns,2.2v~3.6v,44 Pin TSOP II, RoHS

128Kx16 LOW VOLTAGE,  ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION IS62WV12816EBLL-45TLI

The IS62WV12816EBLL-45TLI ISSI IS62/65WV12816EALL/EBLL are high-speed, 2M

bit static RAMs organized as 128K words by 16 bits. It is

fabricated using ISSI's high-performance CMOS technology.

This highly reliable process coupled with innovative circuit

design techniques, yields high-performance and low power

consumption devices.

When CS1# is HIGH (deselected) or when CS2 is LOW

(deselected) or when CS1# is LOW, CS2 is HIGH and both

LB# and UB# are HIGH, the device assumes a standby

mode at which the power dissipation can be reduced down

with CMOS input levels.

KEY FEATURES IS62WV12816EBLL-45TLI

 High-speed access time: 45ns, 55ns

 CMOS low power operation

– Operating Current: 18 mA (max) at 85°C

 – CMOS Standby Current: 5.4uA (typ) at 25°C

 TTL compatible interface levels

 Single power supply

–1.65V-2.2V VDD (IS62WV12816EALL)

– 2.2V-3.6V VDD (IS62/65WV12816EBLL)

 Three state outputs

 Industrial and Automotive temperature support

 Lead-free available