IS42S32200E-6TL 动态随机存取存储器

IS42S32200E-6TL

动态随机存取存储器 64M 2Mx32 166Mhz SDR S动态随机存取存储器, 3.3V

512K Bits x 32 Bits x 4 Banks (64-MBIT)  SYNCHRONOUS DYNAMIC RAM

OVERVIEW IS42S32200E-6TL

ISSI's 64Mb Synchronous DRAM IS42S32200E-6TL IS42S32200E is organized as 524,288 bits x 32-bit x 4-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.

FEATURES IS42S32200E-6TL

• Clock frequency: 200, 166, 143 MHz

• Fully synchronous; all signals referenced to a positive clock edge

• Internal bank for hiding row access/precharge

• Single 3.3V power supply

• LVTTL interface

• Programmable burst length: (1, 2, 4, 8, full page)

• Programmable burst sequence: Sequential/Interleave

• Self refresh modes

• 4096 refresh cycles every 64 ms

• Random column address every clock cycle

• Programmable CAS latency (2, 3 clocks)

• Burst read/write and burst read/single write operations capability

• Burst termination by burst stop and precharge command

• Available in Industrial temperature grade

• Available in 400-mil 86-pin TSOP II and 90-ball BGA