无锡固电ISC供应2S*064三*管

SY*OL

PARAMETER

VALUE

UNIT

V_CBO

Collector-Base Voltage                     

50

V

V_CEO

Collector-Emitter Voltage                        

50

V

V_EBO

Emitter-Base Voltage

6

V

I_C

Collector Current-Continuous

12

A

I_B

Base Current-Continuous

3

A

P_C

Collector Power Dissipation

@ T_C=25℃

35

W

T_J

JunctionTemperature

150

℃

T_stg

StorageTemperature Range

-55~150

℃

SY*OL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V_(BR)CEO

Collector-Emitter Breakdown Voltage

I_C= 25mA ; I_B= 0

50

V

V_CE(sat)

Collector-Emitter Saturation Voltage

I_C= 6A; I_B= 0.3A

0.35

V

I_CBO

Collector Cutoff Current

V_CB=50V; I_E= 0

100

μA

I_EBO

Emitter Cutoff Current

V_EB= 6V; I_C= 0

10

μA

h_FE

DC Current Gain

I_C= 6A ; V_CE= 1V

50

f_T

Current-Gain—Bandwidth Product

I_E= -0.5A ; V_CE= 12V

40

MHz

C_OB

Output Capacitance

I_E= 0 ; V_CB= 12V;f_test= 1.0MHz

180

pF

Switching times

t_on

Turn-on Time

I_C= 6A ; I_B1= -I_B2= 0.12A

R_L= 4Ω;V_CC= 24V

0.6

μs

t_stg

Storage Time

1.4

μs

t_f

Fall Time

0.4

μs