IRG4PF50WDPBF 绝缘栅双极型晶 恢复二极管

IRG4PF50WD

• Optimized for use in Welding and Switch-Mode

Power Supply applications

• Industry benchmark switching losses improve

efficiency of all power supply topologies

• 50% reduction of Eoff parameter

• Low IGBT conduction losses

• Latest technology IGBT design offers tighter

parameter distribution coupled with

exceptional reliability

• IGBT co-packaged with HEXFREDTM ultrafast,

ultra-soft-recovery anti-parallel diodes for use in

bridge configurations

• Industry standard TO-247AC package

Benefits

IRG4PF50WD

Parameter Min. Typ. Max. Units

RθJC Junction-to-Case - IGBT ––– ––– 0.64

RθJC Junction-to-Case - Diode ––– ––– 0.83 °C/W

RθCS Case-to-Sink, flat, greased surface ––– 0.24 –––

RθJA Junction-to-Ambient, typical socket mount ––– ––– 40

Wt Weight ––– 6 (0.21) ––– g (oz)

Thermal Resistance

• Lower switching losses allow more cost-effective

operation and hence efficient replacement of larger-die

MOSFETs up to 100kHz

• HEXFREDTM diodes optimized for performance with IGBTs.

Minimized recovery characteristics reduce noise, EMI and

switching losses

IRG4PF50WD

TO-247AC

VCES = 900V

VCE(on) typ. = 2.25V

@VGE = 15V, IC = 28A

Parameter Max. Units

VCES Collector-to-Emitter Breakdown Voltage 900 V

IC @ TC = 25°C Continuous Collector Current 51

IC @ TC = 100°C Continuous Collector Current 28 A

ICM Pulsed Collector Current  204

ILM Clamped Inductive Load Current ‚ 204

IF @ TC = 100°C Diode Continuous Forward Current 16

IFM Diode Maximum Forward Current 204

VGE Gate-to-Emitter Voltage ± 20 V

PD @ TC = 25°C Maximum Power Dissipation 200

PD @ TC = 100°C Maximum Power Dissipation 78

TJ Operating Junction and -55 to + 150

TSTG Storage Temperature Range

IRG4PF50WDPBFIRG4PF50WDPBF

IRG4PF50WDPBF

IRG4PF50WDPBF

IRG4PF50WD IRG4PF50WDPBF