供应IRF740STRLPBF TO263 功率场效应管 N沟道

地区:广东 深圳
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型号:IRF740STRLPBF
厂家:IRF [International Rectifier]
类别:分离式半导体产品
家庭:FET - 单
系列:-
FET 型:MOSFET N 通道,金属氧化物
FET 特点:标准型
漏极至源极电压(Vdss):400V
电流 - 连续漏极(Id) @ 25° C:10A
开态Rds(最大)@ Id, Vgs @ 25° C:550 毫欧 @ 6A,10V
Id 时的 Vgs(th)(最大):4V @ 250μA
闸电荷(Qg) @ Vgs:63nC @ 10V
输入电容 (Ciss) @ Vds:1400pF @ 25V
功率 - 最大:3.1W
安装类型:表面贴装
封装/外壳:TO-263-3,D2Pak(2 引线+接片),TO-263AB
供应商设备封装:D2PAK
包装:带卷 (TR)
数据列表:IRF740SPBF
其它名称:IRF740STRLPBF-NDIRF740STRLPBFTR
标准包装:800

备注:深圳市勤思达科技有限公司主营音响系列IGBT晶体管,MOS管,功率对管,授权分销,品质保证,现货库存热卖IRF740STRLPBF,正品原装,长期有货,欢迎广大客户朋友咨询洽谈。

FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

• Surface Mount

• Available in Tape and Reel

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The D2PAK (TO-263) is a surface mount power package

capable of accommodating die size up to HEX-4. It provides

the highest power capability and the lowest possible

on-resistance in any existing surface mount package. The

D2PAK (TO-263) is suitable for high current applications

because of its low internal connection resistance and can

dissipate up to 2.0 W in a typical surface mount application.

型号/规格

IRF740STRLPBF

品牌/商标

IR

封装形式

TO263-3

环保类别

无铅环保型

安装方式

贴片式

包装方式

卷带编带包装

功率特征

中功率