IRFB52N15DPBF MOSFET ▊进口原装现货▊

Parameter

Max.

Units

I_D @ T_C = 25°C

Continuous Drain Current, V_GS @ 10V <v

51*

A

I_D @ T_C = 100°C

Continuous Drain Current, V_GS @ 10V <v

36*

IDM

Pulsed Drain Current CD

240

P_D @T_A = 25°C

Power Dissipation <v

3.8

W

P_D @T_C = 25°C

Power Dissipation <v

230*

Linear Derating Factor <v

1.5*

W/°C

VGS

Gate-to-Source Voltage

± 30

V

dv/dt

Peak Diode Recovery dv/dt CT

5.5

V/ns

T_J

Operating Junction and

-55 to + 175

°C

TSTG

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

Mounting torqe, 6-32 or M3 screw®

10 lbf•in (1.1N•m)

Parameter

Typ.

Max.

Units

RqJC

Junction-to-Case

–––

0.47*

°C/W

RqCS

Case-to-Sink, Flat, Greased Surface ®

0.50

–––

RqJA

Junction-to-Ambient®

–––

62

RqJA

Junction-to-Ambient<v

–––

40