IRFS4310ZTRLPBF MOSFET ▊原装现货▊

Symbol

Parameter

Max.

Units

I_D @ T_C = 25°C

Continuous Drain Current, V_GS @ 10V (Silicon Limited)

127CD

A

I_D @ T_C = 100°C

Continuous Drain Current, V_GS @ 10V (Silicon Limited)

90CD

I_D @ T_C = 25°C

Continuous Drain Current, V_GS @ 10V (Wire Bond Limited

120

IDM

Pulsed Drain Current Q)

560

P_D @T_C = 25°C

Maximum Power Dissipation

250

W

Linear Derating Factor

1.7

W/°C

VGS

Gate-to-Source Voltage

± 20

V

dv/dt

Peak Diode Recovery ©

18

V/ns

T_J

TSTG

Operating Junction and

Storage Temperature Range

-55  to + 175

°C

Soldering Temperature, for 10 seconds

(1.6mm from case)

300

Mounting torque, 6-32 or M3 screw

10lb·in (1.1N·m)

EAS (Thermally limited)

Single Pulse Avalanche Energy CT

475

mJ

IAR

Avalanche Current CD

See Fig. 14, 15, 22a, 22b,

A

EAR

Repetitive Avalanche Energy �

mJ