IRLR3915TRPBF MOSFET ▊进口原装现货▊

Parameter

Max.

Units

I_D @ T_C = 25°C

Continuous Drain Current, V_GS @ 10V (Silicon limited)

61

A

I_D @ T_C = 100°C

Continuous Drain Current, V_GS @ 10V (See Fig.9)

43

I_D @ T_C = 25°C

Continuous Drain Current, V_GS @ 10V (Package limited)

30

IDM

Pulsed Drain Current CD

240

P_D @T_C = 25°C

Power Dissipation

120

W

Linear Derating Factor

0.77

W/°C

VGS

Gate-to-Source Voltage

± 16

V

EAS

Single Pulse Avalanche Energy0

200

mJ

E_AS (6 sigma)

Single Pulse Avalanche Energy Tested Value<v

600

IAR

Avalanche CurrentCD

See Fig.12a, 12b, 15, 16

A

EAR

Repetitive Avalanche Energy®

mJ

T_J

TSTG

Operating Junction and

Storage Temperature Range

-55 to + 175

°C

Soldering Temperature, for 10 seconds

300 (1.6mm from case )