IRFB7437PBF MOSFET ▊进口原装现货▊

Symbol

Parameter

Max.

Units

I_D @ T_C = 25°C

Continuous Drain Current, V_GS @ 10V (Silicon Limited)

250CD

A

I_D @ T_C = 100°C

Continuous Drain Current, V_GS @ 10V (Silicon Limited)

180

I_D @ T_C = 25°C

Continuous Drain Current, V_GS @ 10V (Wire Bond Limited)

195

IDM

Pulsed Drain Current <I

1000

P_D @T_C = 25°C

Maximum Power Dissipation

230

W

Linear Derating Factor

1.5

W/°C

VGS

Gate-to-Source Voltage

± 20

V

T_J

TSTG

Operating Junction and

Storage Temperature Range

-55  to + 175

°C

Soldering Temperature, for 10 seconds (1.6mm from case)

300

Mounting torque, 6-32 or M3 screw

10lbf· in (1.1N· m)