IRFR220TRPBF MOSFET ▊进口原装现货▊

ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

VDS

200

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current

V_GS at 10 V

T_C = 25 °C

I_D

4.8

A

T_C = 100 °C

3.0

Pulsed Drain Currenta

IDM

19

Linear Derating Factor

0.33

W/°C

Linear Derating Factor (PCB Mount) e

0.020

Single Pulse Avalanche Energy b

EAS

161

mJ

Repetitive Avalanche Current a

IAR

4.8

A

Repetitive Avalanche Energy a

EAR

4.2

mJ

Maximum Power Dissipation

T_C = 25 °C

P_D

42

W

Maximum Power Dissipation (PCB mount) e

T_A = 25 °C

2.5

Peak Diode Recovery dV/dt c

dV/dt

5.0

V/ns

Operating Junction and Storage Temperature Range

TJ, Tstg

-55 to +150

°C

Soldering Recommendations (Peak temperature) d

for 10 s

260