LCMXO2-1200HC-4TG144C FPGA

地区:广东 深圳
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深圳市中立信电子科技有限公司

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LCMXO2-1200HC-4TG144C

FPGA - 现场可编程门阵列 1280 LUTs 108 I/O 3.3V -4 SPD


Features LCMXO2-1200HC-4TG144C

 Flexible Logic Architecture

• Six devices with 256 to 6864 LUT4s and

18 to 334 I/Os

 Ultra Low Power Devices

• Advanced 65 nm low power process

• As low as 22 μW standby power

• Programmable low swing differential I/Os

• Stand-by mode and other power saving options

 Embedded and Distributed Memory

• Up to 240 kbits sysMEM™ Embedded Block

RAM LCMXO2-1200HC-4TG144C

• Up to 54 kbits Distributed RAM

• Dedicated FIFO control logic

 On-Chip User Flash Memory

• Up to 256 kbits of User Flash Memory

• 100,000 write cycles

• Accessible through WISHBONE, SPI, I2

C and 

JTAG interfaces

• Can be used as soft processor PROM or as

Flash memory LCMXO2-1200HC-4TG144C

 Pre-Engineered Source Synchronous I/O

• DDR registers in I/O cells

• Dedicated gearing logic

• 7:1 Gearing for Display I/Os

• Generic DDR, DDRX2, DDRX4

• Dedicated DDR/DDR2/LPDDR memory with

DQS support

 TransFR™ Reconfiguration

• In-field logic update while system operates

 Enhanced System Level Support

• On-chip hardened functions: SPI, I2

C, timer/

counter

• On-chip oscillator with 5.5% accuracy

• Unique TraceID for system tracking

• One Time Programmable (OTP) mode

• Single power supply with extended operating

range

• IEEE Standard 1149.1 boundary scan

• IEEE 1532 compliant in-system programming

 Broad Range of Package Options

• TQFP, WLCSP, ucBGA, csBGA, caBGA, ftBGA,

fpBGA, QFN package options

• Small footprint package options

– As small as 2.5 mm x 2.5 mm

• Density migration supported

• Advanced halogen-free packaging

分布式RAM

: 10 kbit

输入/输出端数量

: 108 I/O

工作电源电压

: 2.5 V/3.3 V

工作电源电流

: 3.49 mA

工作温度

: 0 C

工作温度

: + 85 C