11N60 DG11N60 大功率开关电源MOS 场效应管

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Features :
   High input resistance and low drive current
              Sound temperature characteristic
              Fast switching speed
              Easy to increase current capacity by parallel wayMajor
Applications :Power switching circuit and power amplification circuit

DG11N60 VDMOS power transistor  
Absolute maximum ratings  ( Tamb=25oC)

Parameter

Symbol

Rating value

Unit

drain current ( continuous )

ID

11

A

drain source voltage

VGS

&plu*n;30

V

drain current  ( pulsed )

IDM

33

A

thermal resistance (junction case )

RθJC

1

℃/W

dissipated power Tc=25oC

Ptot

175

W

junction temperature

Tj

-55 to 150

 

storage temperature

Tstg

-55 to 150

 

 

DG11N60 VDMOS power transistor
Electrical characteristics
( Tamb=25oC)

Parameter

Symbol

Test conditions

Value

Unit

MIN

*R

MAX

D-S voltage

VDSS

VGS=0V,  ID=250μA

600

  

V

D-S on resistance

RDS(on)

VGS=10V, ID=5.5A

 

0.32

0.38

Ω

gate threshold voltage

VGS(th)

VDS=VGS, ID=250μA

2

 

4

V

S-D leakage current

IDSS

VDS=600V, VGS=0V

  

10

μA

G-S leakage current

IGSS

VGS= 30V

  

&plu*n;100

nA

transconductance

gfs

VDS=50V, ID=5.5A

 

9.7

 

S

input capacitance

 

Ciss

VGS=0V, VDS=25V, f=1.0mHz

 

1148

1490

pF

品牌/型号

DG 东光/11N60 DG11N60

种类

*缘栅MOSFET

用途

SW-REG/开关电源

封装外形

CER-DIP/陶瓷直插

材料

N-FET硅N沟道

开启电压

30(V)

夹断电压

2-4(V)

跨导

10(μS)

*间电容

1148(pF)

低频噪声系数

0.1(dB)

漏*电流

11000(mA)

耗散功率

175000(mW)

沟道类型

N沟道

导电方式

增强型