10N60 DG10N60 电源开关MOS 场效应管 *销售

Features :   High input resistance and low drive current
              Sound temperature characteristic
              Fast switching speed
              Easy to increase current capacity by parallel wayMajor
Applications :Power switching circuit and power amplification circuit

DG10N60 VDMOS  power transistor
Absolute maximum ratings 
( Tamb=25oC)

Parameter

Symbol

Rating value

Unit

drain current ( continuous )

I_D

9.5

A

drain source voltage

V_GS

&plu*n;30

V

drain current  ( pulsed )

I_DM

38

A

thermal resistance （junction case )

R_θJC

0.8

℃/W

dissipated power Tc=25oC

P_tot

156

W

junction temperature

T_j

-55 to 150

℃

storage temperature

T_stg

-55 to 150

℃

DG10N60 VDMOS  power transistor Electrical characteristics 
( Tamb=25oC)

Parameter

Symbol

Test conditions

Value

Unit

MIN

*R

MAX

D-S voltage

V_DSS

V_GS=0V,  I_D=250μA

600

V

D-S on resistance

R_DS(on)

V_GS=10V, I_D=4.75A

0.6

0.73

Ω

gate threshold voltage

V_GS(th)

V_DS=V_GS, I_D=250μA

2

4

V

S-D leakage current

I_DSS

V_DS=600V, V_GS=0V

10

μA

G-S leakage current

I_GSS

V_GS= 30V

&plu*n;100

nA

transconductance

g_fs

V_DS=50V, I_D=4.75A

8

S

input capacitance

C_iss

V_GS=0V, V_DS=25V, f=1.0mHz

1570

2040

pF