*现货供应 开关三*管PXT8050D

*现货供应 开关三*管PXT8050D

JIANGSU CHANGJIANG ELE*RONICS TECH*LOGY CO., LTD
SOT-89 Plastic-Encapsulate Transistors
PXT8050 TRANSISTOR (NPN)
FEATUR*
z Compliment to PXT8550
MARKING: Y1
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 40 V
VCEO Collector-Emitter Voltage 25 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current -Continuous 1.5 A
PC Collector Power dissipation 0.5 W
TJ Junction Temperature 150 ℃
Tstg Storage Temperature -55-150 ℃
ELE*RICAL CHARA*ERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=100uA, IE=0 40 V
Collector-emitter breakdown voltage V(BR)CEO IC=0.1mA, IB=0 25 V
Emitter-base breakdown voltage V(BR)EBO IE=100μA, IC=0 5 V
Collector cut-off current ICBO VCB=40V, IE=0 0.1 μA
Emitter cut-off current ICEO VCE=20V, IE=0 0.1 μA
Emitter cut-off current IEBO VEB=5V, IC=0 0.1 μA
hFE(1) VCE=1V, IC=100mA 85 400
DC current gain
hFE(2) VCE=1V, IC=800mA 40
Collector-emitter saturation voltage VCE(sat) IC=800mA, IB=80mA 0.5 V
Base-emitter saturation voltage VBE(sat) IC=800mA, IB=80mA 1.2 V
Base-emitter voltage VBE VCE=1V, IC=10mA 1 V
Base-emitter positive favor voltage VBEF IB=1A 1.55 V
Transition frequency fT VCE=10V,IC=50mA,f=30MHz 100 MHz
output capacitance Cob VCB=10V,IE=0,f=1MHz 15 pF
CLASSIFICATION OF hFE(1)
Rank B C D D3
Range -400