*现货 三*管MPSA05放大三*管

*现货供应 三*管MPSA05

=25°C unless otherwise noted
Electrical Characteristics TC=25°C unless otherwise noted
* Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0%
Thermal Characteristics TA=25°C unless otherwise noted
* Device mounted on FR-4 PCB 1.6” × 0.06"
Symbol Parameter Value Units
VCEO Collector-Emitter Voltage 60 V
VCBO Collector-Base Voltage 60 V
VEBO Emitter-Base Voltage 4.0 V
IC Collector current - Continuous 500 mA
TJ, Tstg Junction and Storage Temperature -55 ~ +150 °C
Symbol Parameter Test Condition Min. T*. Max. Units
Off Characteristics
V(BR)CEO Collector-Emitter Breakdown Voltage * IC = 1mA, IB = 0 60 V
V(BR)EBO Emitter-Base Breakdown Voltage IC = 100μA, IC = 0 4 V
ICEO Collector Cutoff Current VCE = 60V, IB = 0 0.1 μA
ICBO Emitter Cutoff Current VCB = 60V, IE = 0 0.1 μA
On Characteristics
hFE DC Current Gain IC = 10mA, VCE = 1.0V
IC = 100mA, VCE = 1.0V
100
100
VCE(sat) Collector-Emitter Saturation Voltage IC = 100mA, IB = 10mA 0.25 V
VBE(on) Base-Emitter On Voltage IC = 100mA, VCE = 1.0V 1.2 V
Small Signal Characteristics
fT Current Gain Bandwidth Product IC = 10mA, VCE = 2V,
f = 100MHz
100 MHz
Symbol Parameter
Max.
Units
MPSA05 *M*TA05
PD Total Device Dissipation
Derate above 25°C
625
5
350
2.8
mW
mW/°C
RθJC Thermal Resistance, Junction to Case 83.3 °C/W
RθJA Thermal Resistance, Junction to Ambient 200 357 °C/W