供应 场效应管 FDPF10N50FT 10N50

产品型号:FDPF10N50FT 500V N-Channel MOSFET

封装:TO-220F

品牌：FAIRCHILD/仙童

源漏极间雪崩电压V(br)dss(V):500

夹断电压VGS(V):±30

最大漏极电流Id(A):9

源漏极最大导通电阻rDS(on)(Ω):0.85 @VGS = 10 V

开启电压VGS(TH)(V):5

功率PD(W):42

输入电容Ciss(PF):880 typ.

通道极性:N沟道

低频跨导gFS(s)：8.5

单脉冲雪崩能量EAS(mJ):364

导通延迟时间Td(on)(ns):20 typ.

上升时间Tr(ns):40 typ.

关断延迟时间Td(off)(ns):45 typ.

下降时间Tf(ns):30 typ.

温度(℃): -55 ~150

描述:FDPF10N50FT,TO-220F,DIP/MOS,N场,500V,9A,0.85Ω N-沟道增强型场效应晶体管
   These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary,planar stripe, DMOS technology.
   This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance,and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor correction.

特点：
 * RDS(on) = 0.71Ω ( Typ.) @ VGS = 10V, ID = 4.5A
 * Low Gate Charge ( Typ. 18nC)
 * Low Crss ( Typ. 10pF)
 * Fast Switching
 * 100% Avalanche Tested
 * Improved dv/dt Capability
 * RoHS Compliant

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专业经营：各种三极管、场效应管、可控硅、稳压ＩＣ、开关电源IC、肖特基、IGBT等
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