场效应管 BSC884N03MSG,884N03MS,BSC884N03

BSC884N03MS G,QFN-8 5*6/PG-TDSON-8,SMD/MOS,N场,34V,85A,0.0045Ω

Parameter	Symbol	Conditions	Value	Unit
Drain-source breakdown voltage	V(BR)DSS	VGS=0V,ID=10mA	30	V
Continuous drain current	ID	VGS=10V,TC=25℃	85	A
Pulsed drain current	IDM	TC=25℃	340	A
Power dissipation	Ptot	TC=25℃	50	W
Gate source voltage	VGS		±20	V
Gate threshold voltage	VGS(th)	VDS=VGS,ID=250µA	2	V
Avalanche energy, single pulse	EAS	ID=20A, RGS=25Ω	35	mJ
Drain-source on-state resistance	RDS(on)	VGS=10V, ID=30A	4.5	mΩ
Input capacitance	Ciss	VGS=0V,VDS=15V, f=1MHz	2700	PF
Transconductance	gfs	\|VDS\|>2\|ID\|RDS(on)max,ID=30A	79	S

型号/规格

BSC884N03MSG,QFN-8 5*6/PG-TDSON-8,SMD/MOS,N场,34V,85A,0.0045Ω

品牌/商标

INFINEON（英飞凌）

封装形式

QFN-8 5*6/PG-TDSON-8

环保类别

无铅环保型

安装方式

贴片式

包装方式

5000/盘

供应 场效应管 BSC884N03MSG,884N03MS,BSC884N03