供应 场效应管 BSZ160N10NS3G,160N10N

产品型号:BSZ160N10NS3G

封装:QFN-8 3.3*3.3/PG-TSDSON-8

源漏极间雪崩电压V(br)dss(V):100

夹断电压VGS(V):±20

雪崩能量EAS(mJ):80

最大漏极电流Id(A):40

源漏极最大导通电阻rDS(on)(Ω):0.016 @VGS = 10 V

开启电压VGS(TH)(V):3.5

功率PD(W):63

极间电容Ciss(PF):1300

通道极性:N通道

低频跨导gFS(s)：33

温度(℃): -55 ~150

描述:100V,40A,OptiMOS Power-Transistor

Features
? Ideal for high frequency switching
? Optimized technology for DC/DC converters
? Excellent gate charge x RDS(on) product (FOM)
? N-channel, normal level
? 100% avalanche tested
? Pb-free plating; RoHS compliant
? Qualified according to JEDEC for target applications

(产品图片,产品参数,产品PDF等产品相关信息在线了解\查询\下载.)