供应 场效应管 BSC018NE2LSI,018NE2LI
地区:广东 深圳
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BSC018NE2LSI,QFN-8 5*6/PG-TDSON-8,SMD/MOS,N场,25V,100A,0.0018Ω
Parameter | Symbol | Conditions | Value | Unit |
Drain-source breakdown voltage | V(BR)DSS | VGS=0V,ID=10mA | 25 | V |
Continuous drain current | ID | VGS=10V,TC=25℃ | 100 | A |
Pulsed drain current | IDM | TC=25℃ | 400 | A |
Avalanche energy, single pulse | EAS | ID=50A, RGS=25Ω | 45 | mJ |
Gate source voltage | VGS | ±20 | V | |
Power dissipation | Ptot | TC=25℃ | 69 | W |
Gate threshold voltage | VGS(th) | VDS=VGS,ID=250µA | 2.2 | V |
Drain-source on-state resistance | RDS(on) | VGS=10V, ID=30A | 1.8 | mΩ |
Input capacitance | Ciss | VGS=0V,VDS=12V, f=1MHz | 2500 | PF |
Transconductance | gfs | |VDS|>2|ID|RDS(on)max,ID=30A | 130 | S |
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BSC018NE2LSI,QFN-8 5*6/PG-TDSON-8,SMD/MOS,N场,25V,100A.
INFINEON(英飞凌)
QFN-8 5*6/PG-TDSON-8
无铅环保型
贴片式
5000/盘
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