2N3055

是否提供加工定制：是	品牌：ST/意法	型号：2N3055
应用范围：放大	材料：硅	*性：NPN型
集电**大允许电流ICM：15（A）	集电**大耗散功率PCM：115（W）	截止频率fT：2.5（MHz）
结构：扩散型	封装形式：功率型	封装材料：金属封装

2N3055
MJ2955
COMPLEMENTARY SILICON POWER TRANSISTORS

n STMicroelectronics PREFERRED
SAL*TYP*
n COMPLEMENTARY NPN-PNP DEVIC*
D*CRIPTION
The 2N3055 is a silicon Epitaxial-Base Planar
NPN transistor mounted in Jedec TO-3 metal
case.
It is intended for power switching circuits, series
and shunt regulators, output stages and high
fidelity amplifiers.
The complementary PNP t*e is MJ2955.

ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
NPN 2N3055
PNP MJ2955
VCBO Collector-Base Voltage (IE = 0) 100 V
VCER Collector-Emitter Voltage (RBE £ 100W) 70 V
VCEO Collector-Emitter Voltage (IB = 0) 60 V
VEBO Emitter-Base Voltage (IC = 0) 7 V
IC Collector Current 15 A
IB Base Current 7 A
Ptot Total Dissipation at Tc £ 25 oC 115 W
Tstg Storage Temperature -65 to 200 oC
Tj Max. Operating Junction Temperature 200 oC
For PNP t*es voltage and current values are negative.