供应S8050

 S8050

FEATUR*
Power dissipation
PCM : 0.625 W（Tamb=25℃）
Collector current
ICM : 0.5 A
Collector-base voltage
V(BR)CBO : 40 V

ELE*RICAL CHARA*ERISTICS（Tamb=25℃ unless otherwise specified）
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic= 100μA , IE=0 40 V
Collector-emitter breakdown voltage V(BR)CEO Ic= 0.1 mA， IB=0 25 V
Emitter-base breakdown voltage V(BR)EBO IE= 100μA， IC=0 5 V
Collector cut-off current ICBO VCB= 40 V , IE=0 0.1 μA
Collector cut-off current ICEO VCE= 20 V , IB=0 0.1 μA
Emitter cut-off current IEBO VEB= 5 V， IC=0 0.1 μA
HFE（1） VCE= 1 V, IC= 50mA 85 300
DC current gain(note)
HFE（2） VCE= 1 V, IC= 500mA 50
Collector-emitter saturation voltage VCE(sat) IC= 500mA, IB= 50 mA 0.6 V
Base-emitter saturation voltage VBE(sat) IC= 500mA, IB= 50 mA 1.2 V
Base-emitter voltage VBE IE= 100mA 1.4 V
Transition frequency fT
VCE= 6 V, IC= 20mA
f = 30MHz
150 MHz