批发高频三*管2SC3357/RF ,SOT-89

是否提供加工定制：是	品牌：NEC/日本电气	型号：2SC3357
应用范围：放大	*性：NPN型	集电**大允许电流ICM：0.1（A）
集电**大耗散功率PCM：1（W）	截止频率fT：6.5（MHz）	结构：点接触型
封装形式：贴片型	封装材料：塑料封装

SILICON TRANSISTOR
2SC3357

NPN SILICON EPITAXIAL TRANSISTOR
POWER MINI MOLD

D*CRIPTION
The 2SC3357 is an NPN silicon epitaxial transistor designed for
low noise amplifier at VHF, UHF and CATV band.
It has large dynamic range and good current characteristic

FEATUR*
• Low Noise and High Gain
NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V,
IC = 7 mA, f = 1.0 GHz
NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V,
IC = 40 mA, f = 1.0 GHz
• Large PT in Small Package
PT : 2 W with 16 cm2 ´ 0.7 mm Ceramic Substrate.

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Collector to Base Voltage          VCBO          20 V
Collector to Emitter Voltage      VCEO          12 V
Emitter to Base Voltage              VEBO          3.0 V
Collector Current                        IC              100 mA
Total Power Dissipation               PT*            1.2 W
Thermal Resistance                     Rth(j-a)*   62.5 °C/W
Junction Temperature                 Tj               150 °C
Storage Temperature                 Tstg          -65 to +150 °C
* mounted on 16 cm2 ´ 0.7 mm Ceramic Substrate