高频管2SC3585/R44/R45

SILICON TRANSISTOR
2SC3585

MICROW*E LOW *ISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISOR

D*CRIPTION
The 2SC3585 is an NPN epitaxial silicon transistor designed for use in
low-noise and *all signal amplifiers from VHF band to UHF band. The
2SC3585 features excellent power gain with very low-noise figures. The
2SC3585 employs direct nitride p*ivated base surface process (DNP
process) which is an NEC proprietary new fabrication technique which
provides excellent noise figures at high current values. This allows
excellent *ociated gain and very wide dynamic range.

FEATUR*
• NF 1.8 dB TYP. @f = 2.0 GHz
• Ga 9 dB TYP. @f = 2.0 GHz

ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Collector to Base Voltage                          VCBO                            20 V
Collector to Emitter  Voltage                      VCEO                           10 V
Emitter to Base Voltage                            VEBO                            1.5 V
Collector Current                                      IC                                 35 mA
Total Power Dissipation                            PT                                200 mW
Junction Temperature                               Tj                                 150 C
Storage Temperature                               Tstg                            65 to 150 C