2SC3357/RE

 SILICON TRANSISTOR
2SC3357

NPN SILICON EPITAXIAL TRANSISTOR
POWER MINI MOLD

D*CRIPTION
The 2SC3357 is an NPN silicon epitaxial transistor designed for
low noise amplifier at VHF, UHF and CATV band.
It has large dynamic range and good current characteristic.

FEATUR*
• Low Noise and High Gain
NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V,
IC = 7 mA, f = 1.0 GHz
NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V,
IC = 40 mA, f = 1.0 GHz

• Large PT in Small Package
PT : 2 W with 16 cm2 ´ 0.7 mm Ceramic Substrate.

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Collector to Base Voltage                            VCBO                  20 V
Collector to Emitter Voltage                        VCEO                  12 V
Emitter to Base Voltage                              VEBO                  3.0 V
Collector Current                                         IC                       100 mA
Total Power Dissipation                               PT*                     1.2 W
Thermal Resistance                                     Rth(j-a)*              62.5 °C/W
Junction Temperature                                 Tj                         150 °C
Storage Temperature                                 Tstg                     -65 to 150 °C
* mounted on 16 cm2 ´ 0.7 mm Ceramic Substrate