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Description
The NCE6020I uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
Genera Features
● V =60V,I =20A
DS D
RDS(ON) <44m? @ VGS=10V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high *D capability
Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply
无锡新洁能功率半导体有限公司是中国现代大功率半导体器件的领航设计与销售企业,是*家研发成功并上量销售大功率-*结-MOSFET(SJ-MOSFET)的设计公司,紧密结合自身器件与工艺设计技术*的优势,与国际*的芯片*厂、封装、测试*厂保持密切配合与合作,严谨产品质量控制,*产品的持续优质和稳定供货。
SMD(SO)/表面封装
NCE6020
GE-N-FET锗N沟道
L/功率放大
NCE
N沟道
*缘栅(MOSFET)
增强型