UTC*代理20毫欧30V之P-MOSFET现货供应UT4435
地区:广东 深圳
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30V P-CHANNEL POWER MOSFET
D*CRIPTION
The UT4435 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with low gate
voltages. This device is suitable for use as a load switch or in
PWM applications.
FEATUR*
* RDS(ON)≤20mΩ @VGS=-10V
* RDS(ON)≤ 35mΩ @VGS=-4.5V
* Low capacitance
* Low gate charge
* Fast switching capability
* Avalanche energy specified
UTC/友顺
UT4435
*缘栅(MOSFET)
N沟道
增强型
SW-REG/开关电源
SMD(SO)/表面封装
P-FET硅P沟道
1000
8800