ST品牌30V低导通阻值低压N-MOS管 STS10N3LH5

Features
T*e VDSS RDS(on) max ID
STS10N3LH5 30 V 0.021 Ω 10 A

■ RDS(on) * Qg industry benchmark
■ Extremely low on-resistance RDS(on)
■ Very low switching gate charge
■ High avalanche ruggedness
■ Low gate drive power losses
Application
■ Switching applications
Description
This STripFET™V Power MOSFET technology is
among the latest improvements, which have been
especially tailored to achieve very low on-state
resistance providing also one of the *-in-cl*
FOM.