NCE3050K(N-t*e,30V50A,TO-252封装)

地区:广东 深圳
认证:

深圳市粤嘉鸿电子有限公司

普通会员

全部产品 进入商铺

D*CRIPTION

The   NCE3050K   uses   advanced   trench   technology   and

design to provide excellent RDS(ON) with low gate charge. It

can be used in a wide variety of applications.

GENERAL FEATUR*

●  V  =30V,I=50A  

    RDS(ON) < 11m? @ VGS=10V                                                          

    RDS(ON) < 16m? @ VGS=5V

●  High density cell design for ultra low Rdson

●  Fully characterized Avalanche voltage and current

●  Good stability and uniformity with high EAS

●  Excellent package for good heat dissipation

●  Special process technology for high *D capability

Application

●  Power switching application

●  Hard Switched and High Frequency Circuits                                     

●  Uninterruptible Power Supply

"
品牌/商标

NCE(新洁能)

型号/规格

NCE3050K

种类

*缘栅(MOSFET)

沟道类型

N沟道

导电方式

增强型

用途

S/开关

封装外形

SMD(SO)/表面封装

材料

N-FET硅N沟道