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D*CRIPTION
The NCE3050K uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
GENERAL FEATUR*
● V =30V,I=50A
RDS(ON) < 11m? @ VGS=10V
RDS(ON) < 16m? @ VGS=5V
● High density cell design for ultra low Rdson
● Fully characterized Avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high *D capability
Application
● Power switching application
● Hard Switched and High Frequency Circuits
● Uninterruptible Power Supply
"NCE(新洁能)
NCE3050K
*缘栅(MOSFET)
N沟道
增强型
S/开关
SMD(SO)/表面封装
N-FET硅N沟道