场效应管原装STP6NK60ZFP P6NK60ZFP STP6NK60Z P6NK60Z

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场效应管*原装STP6NK60ZFP  P6NK60ZFP   STP6NK60Z  P6NK60Z

 

场效应管*原装STP6NK60ZFP  P6NK60ZFP   STP6NK60Z  P6NK60Z 

STP6NK60ZFP  P6NK60ZFP 全塑封产品规格  参数 

 

Datasheets STx6NK60Z(FP-1)
Product Photos TO-220AB
Catalog Drawings ST Series TO-220FP, TO-*F
Standard Package 50
Category Discrete Semiconductor Products
Family FETs - Single
Series SuperM*H™
FET T*e MOSFET N-Channel, Metal Oxide
FET Feature Standard
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25° C 6A
Rds On (Max) @ Id, Vgs 1.2 Ohm @ 3A, 10V
Vgs(th) (Max) @ Id 4.5V @ 100µA
Gate Charge (Qg) @ Vgs 46nC @ 10V
Input Capacitance (Ciss) @ Vds 905pF @ 25V
Power - Max 30W
Mounting T*e Through Hole
Package / Case TO-220-3 Full Pack
Supplier Device Package TO-220FP
Packaging Tube
Catalog Page 1322 (US2011 Interactive)
1322 (US2011 PDF)
Other Names 497-5956-5

 

STP6NK60Z  P6NK60Z 铁头 半塑封产品规格  参数

 

Datasheets STx6NK60Z(FP-1)
Product Photos TO-220 Pkg
Catalog Drawings ST Series TO-220
Standard Package 50
Category Discrete Semiconductor Products
Family FETs - Single
Series SuperM*H™
FET T*e MOSFET N-Channel, Metal Oxide
FET Feature Standard
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25° C 6A
Rds On (Max) @ Id, Vgs 1.2 Ohm @ 3A, 10V
Vgs(th) (Max) @ Id 4.5V @ 100µA
Gate Charge (Qg) @ Vgs 46nC @ 10V
Input Capacitance (Ciss) @ Vds 905pF @ 25V
Power - Max 110W
Mounting T*e Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220AB
Packaging Tube
Catalog Page 1320 (US2011 Interactive)
1320 (US2011 PDF)
Other Names 497-3198-5

封装外形

CER-DIP/陶瓷直插

型号/规格

STP6NK60ZFP P6NK60ZFP STP6NK60Z P6NK60Z

材料

M*金属半导体

用途

MOS-INM/*组件

品牌/商标

ST/意法

沟道类型

N沟道

种类

*缘栅(MOSFET)

导电方式

增强型