*童IBGT场效应管FGA15N120ANTDTU TO-* 质量**

制造商:  Fairchild Semiconductor   
 
产品种类:  IGBT 晶体管   
 
RoHS:   详细信息  
 
配置:  Single   
 
集电*—发射**大电压 VCEO:  1200 V   
 
栅*/发射**大电压:  /- 20 V   
 
功率耗散:  186 W   
 
*大工作温度:  150 C   
 
封装 / 箱体:  TO-*-3   
 
封装:  Tube   
 
集电**大连续电流 Ic:  30 A  
 
*小工作温度:  - 55 C  
 
安装风格:  Through Hole  
 
Standard Pack Qty:  30  
 *供应*童系列，品质*！*原装，*合ROHS*要求。MOSFET:场效应管FSC FQP50N06 FQP70N08 FQP65N06 FQP85N06 FQP90N08 FQP33N1FQP55N10 FQP90N10V2 FQP46N15 FQP34N20 FQP34N20 FQP13N50 FQP18N50V2 FQP5N60CFQP6N80C FQP7N80 FQP4N90 FQP4N90C FQP5N90 FQP6N90C FQA160N08 FQA70N10 FQA140N10 FQA70N15 FQA90N15 FQA34N20 FQA48N20 FQA65N20 FQA17N40FQA35N40 FQA62N25C FQA17N40 FQA35N40 FQA16N50 FQA24N50 FQA10N80FQA13N80 FQA7N90 FQA9N90 FQA11N90C FQL40N50 SSH70N10A FQP9N90CFQA90N08 FQA55N25 FQA62N25C FQA28N50 FQA24N60 FQP12N60 FQP70N10FQA38N30 FQP17P06 FQP47P06 FQP12P20 FQP*50 ISL9N304AP3 SFP9530/9540,SFP9630/9640,*童系列IGBT系列:FGA25N135AND,FGA25N120AND FGA15N120AND HGTG18N120BND HGTG11N120CNDHGTG10N120BND HGTG5N120BND SGP10N60RUFD SGH15N60RUFD SGH20N60RUFDSGH30N60RUFD SGL50N60RUFD FGL60N100BNTD FGH40N6S2/DF FK60N6S2DFGA50N60LS SGP13N60UFD SGH23N60UFD SGH40N60UFD SGH80N60UFD SGL160N60UFD FGH50N3S2 FGL60N100BNTD FGH50N3S2 FGA50N60LS FMG2G100US60 FMG2G150US60FMG2G300US60 FMG2G400US60 FMG2G50US120 FMG2G75US120 FSM10SH60 FSM15SH60FSM20SM60A FSAM30SM60A SGP13N60UFD SGP23N60UFD SGP40N60UFD SGP80N60UFDSGP160N60UFD HGTG12N60A4D HGTG20N60A4D HGTG30N60A4D FGH40N6S2/D,FGK60N6S2D*快恢复二*管:RHRP8120,RHRP15120,RHRP30120,RHRG30120,RHRG75120.ISL9R860P2,ISL9R1560P2,ISL9K1560G3,ISL9R3060G3,ISL9K3060G3,ISL9R30120G2,FFH30US30DN,FFH50US60S,FFH30US30DN,FFH50US60S,FFPF06U20DN,,FFA15U20DN,FFA30U20DN,FFPF10U30DN,FFA15U40DN,FFA20U40DN,FFPF20U60S,FFPF10U60DN,FFA20U60DN,FFA30U60DN,FFA60U60DN.肖特基二*管:*RP1545N,*RA3045,FYP2010DN,FYP3010DN。 *童 FQA11N90C,FQA9N90C 供应场效应管FQA11N90C,FQA9N90C。