供应三*管 S8050(图)

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MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units
VCBO Collector-Base Voltage 40 V
VCEO Collector-Emitter Voltage 25 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current -Continuous 800 mA
TJ, Tstg Junction and Storage Temperature -55-150 ℃

ELE*RICAL CHARA*ERISTICS(Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 100μA , IE=0 40 V
Collector-emitter breakdown voltage V(BR)CEO* IC= 0.1mA , IB=0 25 V
Emitter-base breakdown voltage V(BR)EBO IE= 100μA , IC=0 6 V
Collector cut-off current ICBO VCB= 35V , IE=0 0.1 μA
Collector cut-off current ICEO VCE= 20V , IB=0 0.1 μA
hFE(1) VCE=1V, IC=5mA 45 hFE(2) VCE=1V, IC=100mA 80 400 DC current gain hFE（3） VCE=1V, IC=800mA 40 Collector-emitter saturation voltage VCE(sat) IC= 800mA, IB=80mA 0.5 V
Base-emitter saturation voltage VBE(sat) IC=800mA, IB= 80mA 1.2 V
Transition frequency f T VCE=6V, IC= 20mA , f=30MHz 150 MHz
* Pulse Test : pulse width ≤ 300μs , duty cycle ≤2%.
CLASSIFICATION OF hFE(2)
Rank B C D D3
Range -400
1 2 3
TO-92
1.EMITTER 2. BASE  3. COLLE*OR